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Dielectric relaxation in Bi12SiO20: Cr crystals

  • Semiconductors and Dielectrics
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Abstract

A study is reported of the temperature and frequency dependences of the permittivity and losses in Cr-doped Bi12SiO20 crystals at sonic frequencies and in the range 300–800 K. A number of dielectric anomalies and a close-to-linear Cole-Cole diagram have been observed. The results are discussed by invoking the concepts of electron hopping and screening of the induced polarization through the relaxation of local lattice distortions.

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Translated from Fizika Tverdogo Tela, Vol. 42, No. 4, 2000, pp. 671–675.

Original Russian Text Copyright © 2000 by Panchenko, Karpova, Duda.

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Panchenko, T.V., Karpova, L.M. & Duda, V.M. Dielectric relaxation in Bi12SiO20: Cr crystals. Phys. Solid State 42, 689–693 (2000). https://doi.org/10.1134/1.1131271

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  • DOI: https://doi.org/10.1134/1.1131271

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