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Electron density redistribution in Sn-doped Bi2Te3

  • Semiconductors. Dielectrics
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Abstract

X-ray photoelectron spectroscopy is used to investigate the redistribution of the density of electronic states in the valence band, and of the binding energies and chemical shifts of core levels in bismuth telluride caused by introduction of impurity tin atoms. A substantial increase in the density of electronic states below the valence-band top at energies μ≈15–30 meV has been revealed. This feature in the energy spectrum accounts for the unusual behavior of the kinetic coefficients in p-Bi2Te3:Sn crystals.

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Fiz. Tverd. Tela (St. Petersburg) 41, 1969–1972 (November 1999)

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Gasenkova, I.V., Zhitinskaya, M.K., Nemov, S.A. et al. Electron density redistribution in Sn-doped Bi2Te3 . Phys. Solid State 41, 1805–1808 (1999). https://doi.org/10.1134/1.1131102

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  • DOI: https://doi.org/10.1134/1.1131102

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