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Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density

  • Magnetism and Ferroelectricity
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Abstract

Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T c . A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained.

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Authors and Affiliations

  1. L. V. Kirenskii Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 660036, Krasnoyarsk, Russia

    V. A. Gavrichkov & S. G. Ovchinnikov

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  1. V. A. Gavrichkov
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  2. S. G. Ovchinnikov
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Fiz. Tverd. Tela (St. Petersburg) 41, 68–76 (January 1999)

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Gavrichkov, V.A., Ovchinnikov, S.G. Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density. Phys. Solid State 41, 59–66 (1999). https://doi.org/10.1134/1.1130731

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  • DOI: https://doi.org/10.1134/1.1130731

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