Abstract
A method of measuring the sign of the conduction-electron g factor in semiconductor quantum-wells is proposed, based on determination of the sense of electron-spin Larmor precession by the Hanle effect or spin-quantum-beat techniques under oblique incidence of pump light on the sample, with the luminescence detected at an angle to the pump beam. This method has been used to measure the sign of the transverse electronic g-factor component in GaAs/Al0.3Ga0.7As quantum-wells of various widths. It has been shown experimentally that the average spin of electrons photocreated in quantum-wells may not coincide with the pump light direction. Expressions for the oscillations of the luminescence circular polarization in the spin-quantum-beat regime and in the Hanle effect have been obtained, taking into account the electron spin relaxation anisotropy.
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Fiz. Tverd. Tela (St. Petersburg) 39, 768–773 (1997)
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Kalevich, V.K., Zakharchenya, B.P., Kavokin, K.V. et al. Determination of the sign of the conduction-electron g factor in semiconductor quantum wells by means of the Hanle effect and spin-quantum-beat techniques. Phys. Solid State 39, 681–685 (1997). https://doi.org/10.1134/1.1129913
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DOI: https://doi.org/10.1134/1.1129913