Abstract
Magnetoresistance (MR) of HgSe1−x Sx crystals has been studied in the temperature range 4.2–300 K and in magnetic fields up to 12 T under hydrostatic pressures P exceeding the threshold P t for the structural phase transition. Shubnikov-de Haas quantum oscillations in longitudinal and transverse MR were observed to occur in the original samples at T=4.2 K. For P>P t, HgSeS crystals transferred to metastable states, which presumably incorporate the high-and low-pressure phases, and in which the oscillations vanished. At the same time the monotonic behavior of MR with magnetic field B, as well as the temperature dependences of resistivity ρ retained the shape characteristic of the original phases. The observed weakening of the dependences of ρ on B and T is attributed to an increase of the temperature independent contribution to ρ caused by phase inclusions and structural defects in the metastable states. It is the corresponding decrease of electron mobility that suppresses the oscillations.
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Fiz. Tverd. Tela (St. Petersburg) 39, 1717–1722 (October 1997)
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Shchennikov, V.V., Kar’kin, A.E., Gavaleshko, N.P. et al. Magnetoresistance of HgSeS crystals at hydrostatic pressures of up to 1 GPa. Phys. Solid State 39, 1528–1532 (1997). https://doi.org/10.1134/1.1129893
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DOI: https://doi.org/10.1134/1.1129893