Abstract
Ultrasoft x-ray spectroscopy methods have been used to observed a change in the energy distribution of the silicon valence states after annealing a-Si:H films at 500 °C. This change appears as three distinct maxima in the density of states 3.5, 7.2, and 10.2 eV above the top of the valence band, which indicates ordering of the a-Si:H structural network. The energy distance between the latter two maxima (E−E v=7.2 and 10.2 eV) supports electron-diffraction data indicating a decrease in the silicon-silicon interatomic distance by 0.2 Å in comparison with the crystal. The presence of a third maximum (E−E v=3.5 eV) is connected with the change in the hybridization of the s-p-functions of silicon with decrease of the coordination number.
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Fiz. Tverd. Tela (St. Petersburg) 39, 243–245 (February 1997)
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Terekhov, V.A., Kovaleva, N.S., Kashkarov, V.M. et al. Variations of the local density of electron states and short-range order in amorphous hydrated silicon films. Phys. Solid State 39, 213–215 (1997). https://doi.org/10.1134/1.1129786
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DOI: https://doi.org/10.1134/1.1129786