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Ohmic Contacts to Gallium Nitride-Based Structures

  • MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS
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Abstract

Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperature treatment is shown. It is demonstrated, for AlGaN/GaN-based heterostructures, that the characteristics of Ti/Al/Ni/Au ohmic contacts are improved upon using ion implantation through a silicon-dioxide mask.

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REFERENCES

  1. D. N. Slapovskiy, A. Yu. Pavlov, V. Yu. Pavlov, and A. V. Klekovkin, Semiconductors 51, 438 (2017).

    Article  ADS  Google Scholar 

  2. V. Yu. Pavlov and A. Yu. Pavlov, Nano-Mikrosist. Tekh. 18, 635 (2016).

    Google Scholar 

  3. Z-S. Kim and H. Ahn, J. Korean Phys. Soc. 66, 779 (2015).

    Article  ADS  Google Scholar 

  4. Z. Zheng, H. Seo, and L. Pang, Phys. Status Solidi A 208, 951 (2011).

    Article  ADS  Google Scholar 

  5. F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J. S. Speck, and U. K. Mishra, IEEE Electron. Dev. Lett. 27, 205 (2006).

    Article  ADS  Google Scholar 

  6. S. S. Arutyunyan, A. Yu. Pavlov, V. Yu. Pavlov, K. N. Tomosh, and Yu. V. Fedorov, Semiconductors 50, 1117 (2016).

    Article  ADS  Google Scholar 

  7. C. Zeng, S. M. Zhang, H. Wang, J. P. Liu, H. B. Wang, Z. C. Li, M. X. Feng, D. G. Zhao, Z. S. Liu, D. S. Jiang, and H. Yang, Chin. Phys. Lett. 2, 017301 (2012).

    Article  ADS  Google Scholar 

  8. M. L. Lee, J. K. Sheu, and C. C. Hu, Appl. Phys. Lett. 91, 182106 (2007).

    Article  ADS  Google Scholar 

  9. B. I. Seleznev, G. Ya. Moskalev, and D. G. Fedorov, Semiconductors 50, 832 (2016).

    Article  ADS  Google Scholar 

  10. A. V. Zhelannov, D. G. Fedorov, and B. I. Seleznev, Vestn. Novg. Univ., Ser.: Tekh. Nauki, No. 6 (104), 24 (2017).

    Google Scholar 

  11. G. K. Reeves, IEEE Electron. Dev. Lett. 3, 111 (1982).

    Article  ADS  Google Scholar 

  12. http://www.srim.org. Accessed July 8, 2019.

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Funding

The work was prepared with financial support from the Ministry of Education and Science of Russia under the projective part of the State assignment, project no. 3.3572.2017/PCh.

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Authors and Affiliations

  1. PC “OKB-Planeta”, 173004, Velikii Novgorod, Russia

    A. V. Zhelannov, A. S. Ionov & D. G. Fedorov

  2. Yaroslav-the-Wise Novgorod State University, 173004, Velikii Novgorod, Russia

    B. I. Seleznev

Authors
  1. A. V. Zhelannov
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  2. A. S. Ionov
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  3. B. I. Seleznev
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  4. D. G. Fedorov
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Corresponding author

Correspondence to A. V. Zhelannov.

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The authors state that they have no conflict of interest.

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Translated by M. Tagirdzhanov

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Zhelannov, A.V., Ionov, A.S., Seleznev, B.I. et al. Ohmic Contacts to Gallium Nitride-Based Structures. Semiconductors 54, 317–321 (2020). https://doi.org/10.1134/S1063782620030197

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  • DOI: https://doi.org/10.1134/S1063782620030197

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