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Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer

  • PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The currents flowing in metal–CaF2–n-Si and metal–SiO2–CaF2–n-Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO2–CaF2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. G. Banshchikov, Yu. Yu. Illarionov, M. I. Vexler & N. S. Sokolov

  2. Vienna University of Technology, A-1040, Vienna, Austria

    Yu. Yu. Illarionov & S. Wachter

Authors
  1. A. G. Banshchikov
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  2. Yu. Yu. Illarionov
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  3. M. I. Vexler
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  4. S. Wachter
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  5. N. S. Sokolov
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Corresponding author

Correspondence to M. I. Vexler.

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Translated by V. Bukhanov

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Banshchikov, A.G., Illarionov, Y.Y., Vexler, M.I. et al. Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer. Semiconductors 53, 833–837 (2019). https://doi.org/10.1134/S1063782619060034

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  • DOI: https://doi.org/10.1134/S1063782619060034

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