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Semiconductors

, Volume 53, Issue 6, pp 833–837 | Cite as

Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer

  • A. G. Banshchikov
  • Yu. Yu. Illarionov
  • M. I. VexlerEmail author
  • S. Wachter
  • N. S. Sokolov
PHYSICS OF SEMICONDUCTOR DEVICES
  • 26 Downloads

Abstract

The currents flowing in metal–CaF2n-Si and metal–SiO2–CaF2n-Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO2–CaF2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.

Notes

REFERENCES

  1. 1.
    M. Sugiyama and M. Oshima, Microelectron. J. 27, 361 (1996).CrossRefGoogle Scholar
  2. 2.
    S. Watanabe, M. Maeda, T. Sugisaki, and K. Tsutsui, Jpn. J. Appl. Phys. B 44, 2637 (2005).ADSCrossRefGoogle Scholar
  3. 3.
    A. Huang, X. Zhang, Y. Li, M. Wang, and Z. Xiao, J. Appl. Phys. 122, 195702 (2017).ADSCrossRefGoogle Scholar
  4. 4.
    E. M. Vogel, K. Z. Ahmed, B. Hornung, W. K. Henson, P. L. McLarty, G. Lucovsky, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Dev. 45, 1350 (1998).ADSCrossRefGoogle Scholar
  5. 5.
    A. F. Shulekin, M. I. Vexler, and H. Zimmermann, Semicond. Sci. Technol. 14, 470 (1999).ADSCrossRefGoogle Scholar
  6. 6.
    S. E. Tyaginov, Yu. Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, and T. Grasser, J. Comput. Electron. 13, 733 (2014).CrossRefGoogle Scholar
  7. 7.
    Ph. Avouris and R. Wolkow, Appl. Phys. Lett. 55, 1074 (1989).ADSCrossRefGoogle Scholar
  8. 8.
    Yu. Yu. Illarionov, A. G. Banshchikov, N. S. Sokolov, S. Wachter, and M. I. Veksler, Tech. Phys. 44 (12) (2018, in press).Google Scholar
  9. 9.
    S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 2, Chap. 9.Google Scholar
  10. 10.
    B. C. Hsu, C.-Y. Liu, W.-T. Liu, and H.-L. Chen, IEEE Trans. Electron Dev. 48, 1747 (2001).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • A. G. Banshchikov
    • 1
  • Yu. Yu. Illarionov
    • 1
    • 2
  • M. I. Vexler
    • 1
    Email author
  • S. Wachter
    • 2
  • N. S. Sokolov
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.Vienna University of TechnologyViennaAustria

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