Abstract
The band gap E g of the CdTe and Cd0.9Zn0.1Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and γ radiation based on these materials (E g = 1.39–1.54 and 1.51–1.6 eV for CdTe and Cd0.9Zn0.1Te, respectively). The used procedure of determination of E g is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E g = 1.47–1.48 eV) and Cd0.9Zn0.1Te (E g = 1.52–1.53 eV) at room temperature substantially narrow the range of accurate determination of E g.
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Original Russian Text © L.A. Kosyachenko, V.M. Sklyarchuk, O.V. Sklyarchuk, O.L. Maslyanchuk, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 10, pp. 1323–1330.
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Kosyachenko, L.A., Sklyarchuk, V.M., Sklyarchuk, O.V. et al. Band gap of CdTe and Cd0.9Zn0.1Te crystals. Semiconductors 45, 1273–1280 (2011). https://doi.org/10.1134/S1063782611100137
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DOI: https://doi.org/10.1134/S1063782611100137