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Silicon goes heavyweight

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A substantial spin–orbit interaction is introduced in a purely silicon heterostructure and can be tuned through an applied gate voltage.

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Fig. 1: Gate-controlled synthetic spin–orbit interaction in silicon.

adapted with permission from ref. 1, Springer Nature Ltd.

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  1. School of Physics and Astronomy, University of Leeds, Leeds, UK

    Christopher H. Marrows

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  1. Christopher H. Marrows
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Correspondence to Christopher H. Marrows.

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Marrows, C.H. Silicon goes heavyweight. Nat. Mater. 20, 1177–1178 (2021). https://doi.org/10.1038/s41563-021-01055-7

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