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Temperature-mediated growth of single-walled carbon-nanotube intramolecular junctions

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Abstract

Single-walled carbon nanotubes (SWNTs) possess superior electronic and physical properties that make them ideal candidates for making next-generation electronic circuits that break the size limitation of current silicon-based technology1,2,3,4. The first critical step in making a full SWNT electronic circuit is to make SWNT intramolecular junctions in a controlled manner. Although SWNT intramolecular junctions have been grown by several methods2,5,6,7,8, they only grew inadvertently in most cases. Here, we report well-controlled temperature-mediated growth of intramolecular junctions in SWNTs. Specifically, by changing the temperature during growth, we found that SWNTs systematically form intramolecular junctions. This was achieved by a consistent variation in the SWNT diameter and chirality with changing growth temperature even though the catalyst particles remained the same. These findings provide a potential approach for growing SWNT intramolecular junctions at desired locations, sizes and orientations, which are important for making SWNT electronic circuits.

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Figure 1: Intramolecular junctions induced by a change in temperature during CVD.
Figure 2: Six intramolecular junctions were induced by three temperature oscillations between 950 and 880 °C during CVD.
Figure 3: AFM image and electrical properties of an SWNT with an S–S intramolecular junction.

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Acknowledgements

This work was supported by NSFC (20573002, 20673004, 50521201) and MOST (2006CB932701, 2006CB932403).

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Correspondence to Jin Zhang or Zhongfan Liu.

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The authors declare no competing financial interests.

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Yao, Y., Li, Q., Zhang, J. et al. Temperature-mediated growth of single-walled carbon-nanotube intramolecular junctions. Nature Mater 6, 283–286 (2007). https://doi.org/10.1038/nmat1865

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