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Effect of Oxygen on the Carrier Life-time in Silicon

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Abstract

IT has been shown1 that the infra-red absorption band found in silicon at 9µ can be correlated with the oxygen content of the silicon, and that this band is related to the Si—O stretching vibration.

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References

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Author notes

  1. P. H. STEPHENS

    Present address: Texas Instrument Co. (Great Britain), Ltd., Dallas Road, Bedford

Authors and Affiliations

  1. Plessey Co., Ltd., Caswell Research Laboratories, Towcester, Northants

    D. H. ROBERTS, P. H. STEPHENS & P. H. HUNT

Authors
  1. D. H. ROBERTS
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  2. P. H. STEPHENS
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  3. P. H. HUNT
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ROBERTS, D., STEPHENS, P. & HUNT, P. Effect of Oxygen on the Carrier Life-time in Silicon. Nature 180, 665–666 (1957). https://doi.org/10.1038/180665a0

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