Abstract
The Ga1–x In x As compound obtained by In-ion implantation (100 keV and (0.45–6)·1017 cm–2) followed by thermal (800 °C and 15') or high-energy electron-beam (1 MeV, 0.6 mA·cm–2, 660 °C, and 16 s) annealing is investigated by Rutherford backscattering, optical absorption, and capacitor photoelectromotive force. It is shown that x increases from 0.07 up to 0.21, and the band gap decreases from 1.34 down to 1.21 eV as the implantation dose increases. The surface potential decreases from 0.79 down to 0.58 V. A high efficiency of electron-beam annealing is pointed out.
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Ardyshev, M.V., Pichugin, V.F. Ionic Synthesis of Ga1–x In x As Solid Solution Films. Russian Physics Journal 47, 175–178 (2004). https://doi.org/10.1023/B:RUPJ.0000034484.97970.7b
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DOI: https://doi.org/10.1023/B:RUPJ.0000034484.97970.7b