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Scattering of Quasi-Two-Dimentional Electrons of the GaAs/Al x Ga1–x As Superlattice by Polar Optical Phonons in the Dielectric Continuum Model

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Abstract

The longitudinal and transverse mobility of electrons in the ground miniband of the GaAs/AlGaAs superlattice (SL) is calculated for the case of scattering on the long-range potential of polar optical (PO) phonons at T = 300 K. The partial contributions of different oscillation modes of the long-range PO-phonon potential to the mobility and effective relaxation time are analyzed. The dependences of the mobility and pulse effective relaxation time on the SL parameters are investigated. The calculation is made using a linearized Boltzmann equation. The scalar PO-phonon potential is calculated within the dielectric continuum model.

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  1. V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Siberia

    S. I. Borisenko

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  1. S. I. Borisenko
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Borisenko, S.I. Scattering of Quasi-Two-Dimentional Electrons of the GaAs/Al x Ga1–x As Superlattice by Polar Optical Phonons in the Dielectric Continuum Model. Russian Physics Journal 46, 1227–1236 (2003). https://doi.org/10.1023/B:RUPJ.0000028149.38021.b3

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  • DOI: https://doi.org/10.1023/B:RUPJ.0000028149.38021.b3

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