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A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection

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Abstract

The structure of (In,Ga,Al)As/GaAs stacks with one to three layers of self-assembled InAs quantum dots is studied by high-resolution x-ray diffractometry and x-ray reflectometry. It is shown that the quantum dots are almost pyramidal in shape. It is found that (i) a first InAs layer, 2.7 ML thick, is invariably produced with a faceted surface and (ii) vertical coupling of quantum dots and superlattice formation do occur (with three quantum-dot layers). It is demonstrated that combining the two methods provides researchers with more reliable structural data.

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Authors and Affiliations

  1. Moscow State Institute of Radio Engineering, Electronics, and Automation (Technical University), Moscow, Russia

    A. A. Zaitsev

  2. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

    V. G. Mokerov

  3. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    E. M. Pashaev, A. G. Sutyrin & S. N. Yakunin

Authors
  1. A. A. Zaitsev
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  2. V. G. Mokerov
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  3. E. M. Pashaev
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  4. A. G. Sutyrin
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  5. S. N. Yakunin
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Zaitsev, A.A., Mokerov, V.G., Pashaev, E.M. et al. A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection. Russian Microelectronics 33, 27–32 (2004). https://doi.org/10.1023/B:RUMI.0000011097.47441.4e

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