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Electrochemical Production of Ultrathin Silicon Dioxide Films

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Abstract

Low-temperature synthesis of ultrathin (≤20 nm) SiO2 films, by anodizing semiconductor single-crystal silicon wafers, is studied. Effects of physicochemical properties of electrolyte and single-crystal silicon on the films' dielectric characteristics are considered.

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Authors and Affiliations

  1. Educational Institution “Belarussian State University of Informatics and Radioelectronics,”, ul. P. Brovki 6, Minsk, 220027, Belarus

    I. L. Baranov, L. S. Stanovaya, L. V. Tabulina & T. G. Rusal'skaya

Authors
  1. I. L. Baranov
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  2. L. S. Stanovaya
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  3. L. V. Tabulina
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  4. T. G. Rusal'skaya
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Baranov, I.L., Stanovaya, L.S., Tabulina, L.V. et al. Electrochemical Production of Ultrathin Silicon Dioxide Films. Russian Journal of Electrochemistry 40, 200–202 (2004). https://doi.org/10.1023/B:RUEL.0000016335.48491.6a

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  • DOI: https://doi.org/10.1023/B:RUEL.0000016335.48491.6a

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