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Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor: Measurement of the Deposition Rate

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Abstract

Experiments in a positive-polarity, wire/plate electrode establish the effects of the concentration of octamethylcyclotetrasiloxane (150–1100 ppm) and the operating current (0.5–2.55 μA/cm length of wire) on the rate of deposition of silicon dioxide on the high voltage wire. The wire is 100 μm radius tungsten and the wire-to-plate spacing is 1.5 cm. Analyses of the deposit with X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy show that it is amorphous silicon dioxide. The deposition rate increases linearly with increasing silicone concentration and corona current. For the concentrations of silicone likely to present in indoor air, the gas-phase processes limit the rate of deposition.

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Authors and Affiliations

  1. Department of Chemical Engineering, California Institute of Technology, Pasadena, CA, 91125

    Junhong Chen

  2. Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN, 55455

    Jane H. Davidson

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  1. Junhong Chen
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  2. Jane H. Davidson
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Correspondence to Jane H. Davidson.

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Chen, J., Davidson, J.H. Chemical Vapor Deposition of Silicon Dioxide by Direct-Current Corona Discharges in Dry Air Containing Octamethylcyclotetrasiloxane Vapor: Measurement of the Deposition Rate. Plasma Chemistry and Plasma Processing 24, 169–188 (2004). https://doi.org/10.1023/B:PCPP.0000013197.77036.f5

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  • DOI: https://doi.org/10.1023/B:PCPP.0000013197.77036.f5

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