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Morphology and optical properties of GaAs layers grown on (1 1 1)A GaAs substrates in N2 ambient by metalorganic chemical vapor deposition

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Abstract

Using tertiary-butyl arsine as a group V precursor, GaAs epitaxial layers have been grown on both (1 1 1)A- and (1 0 0)-oriented GaAs substrates in N2 ambient using the atmospheric metalorganic chemical deposition technique. The surface morphology and optical properties of the GaAs homoepitaxial layers were studied in detail. It is found that both the surface morphologies and optical properties of GaAs layers on (1 1 1)A GaAs substrates depend much more strongly on the combination of growth temperature and V/III input molar ratio, compared to the epitaxial layers on (1 0 0) plane GaAs. The photoluminescence (PL) emission efficiency increases with increasing growth temperature in the region 550–650 °C for both (1 1 1)A and (1 0 0) GaAs epitaxial layers. At room temperature, the PL emission intensity of the (1 1 1)A GaAs epilayer grown under optimum growth conditions is 67 times as strong as that of the same run-grown (1 0 0) GaAs epilayer.

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References

  1. P. M. Petroff, A. Lorke and A. Imamaglu, Phys. Today 54 (2001) 46.

    Google Scholar 

  2. V. R. Yazdanpanah, Z. M. Wang and G. J. Salamo, Appl. Phys. Lett. 82 (2003) 1766.

    Google Scholar 

  3. T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto and T. Hijikata, Appl. Phys. Lett. 52 (1988) 339.

    Google Scholar 

  4. H. Murakami, Y. Kumagai, H. Seki and A. Koukitu, J. Cryst. Growth 247 (2003) 245.

    Google Scholar 

  5. J. L. Sanchez-rojas, A. Sacedon, E. Calleja, E. Munoz, A. Sanz-Hervas, G. De Benito and M. Lopez, Phys. Rev. B 53 (1996) 15469.

    Google Scholar 

  6. C. Mailhiot and D. L. Smith, ibid. 35 (1987) 1242.

    Google Scholar 

  7. R. Grey, J. P. R. David, G. Hill, A. S. Pabla, M. A. Pete, G. S. Ress, P. N. Robson, P. J. RodrÍguez-Girones, T. E. Sale and J. Woodhead, Microelectron. J. 26 (1995) 811.

    Google Scholar 

  8. J. Kim, S. Cho, A. Sanz-Hervas, A. Majerfeld, G. Patriarche and B. W. Kim, J. Cryst. Growth 248 (2003) 359.

    Google Scholar 

  9. H. Yamaguhui, M. R. Fahy and B. A. Joyce, Appl. Phys. Lett. 69 (1996) 776.

    Google Scholar 

  10. S. Fuke, M. Umemura, N. Yamada and K. Kuwahara, J. Appl. Phys. 68 (1990) 97.

    Google Scholar 

  11. S. Ando, S. S. Chang and T. Fukui, J. Cryst. Growth 115 (1991) 69.

    Google Scholar 

  12. M. Umemura, K. Kuwahara and S. Fuke, J. Appl. Phys. 72 (1992) 313.

    Google Scholar 

  13. E. Mao, S. A. Dickey, A. Majerfeld, A. Sanz-Hervas and B. W. Kim, Microelectron. J. 28 (1997) 727.

    Google Scholar 

  14. A. Sanz-Hervas, S. Cho and A. Majerfeld, Appl. Phys. Lett. 76 (2000) 3073.

    Google Scholar 

  15. H. Hardtdegen, M. Hollfelder, R. Meyer, R. Carius, H. Munder, S. Frohnhoff, D. Szynka and H. Luth, J. Cryst. Growth 123 (1992) 420.

    Google Scholar 

  16. C. C. Hsu, Y. F. Yang, H. J. Ou, E. S. Yang and H. B. Lo, Appl. Phys. Lett. 71 (1997) 3248.

    Google Scholar 

  17. V. Piataev, E. Kuphal, S. Jochum, S. Hansmann, H. Janning, B. Kempf, R. Gobel, B. Hubner and H. Burkhard, in Proceedings of the 10th International Conference On Indium Phosphide and Related Materials, Tsukuba, Japan, May, 1998, p. 357.

  18. T. Hayakawa, K. Takahashi, M. Kondo, T. Suyama, S. Yamamoto and T. Hijikata, Phys. Rev. Lett. 60 (1988) 349.

    Google Scholar 

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Authors and Affiliations

  1. Photonics Research Group, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore

    B. L. Zhang, X. H. Tang, G. S. Huang, T. Mei, J. Y. Zhu & H. Li

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  1. B. L. Zhang
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  2. X. H. Tang
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  3. G. S. Huang
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  4. T. Mei
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  5. J. Y. Zhu
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  6. H. Li
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Zhang, B.L., Tang, X.H., Huang, G.S. et al. Morphology and optical properties of GaAs layers grown on (1 1 1)A GaAs substrates in N2 ambient by metalorganic chemical vapor deposition. Journal of Materials Science: Materials in Electronics 15, 283–286 (2004). https://doi.org/10.1023/B:JMSE.0000024227.74645.42

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