Abstract
SmS x materials with x = 0.8–1.5 are synthesized, and their electrical properties are studied in order to ascertain whether they can be used in thermoelectric converters. The results indicate that the optimal composition is SmS0.96, with a thermoelectric figure of merit Z ∼ 0.9 × 10–3 K–1 at 1000 K. The conductivity and thermopower data for SmS x are analyzed in terms of its crystal structure and energy band diagram.
Similar content being viewed by others
REFERENCES
Golubkov, A.V., Goncharova, E.V., Zhuze, V.P., et al., Fizicheskie svoistva khal'kogenidov redkozemel'nykh elementov (Physical Properties of Rare-Earth Chalcogenides), Moscow: Nauka, 1973.
Abrikosov, N.Kh., Zinchenko, K.E., and Eliseev, A.A., Yb-Te Phase Diagram, Izv. Akad. Nauk SSSR, Neorg. Mater., 1970, vol. 6, no. 6, pp. 1172–1173.
Kaminskii, V.V., Golubkov, A.V., and Vasil'ev, L.N., Samarium-Related Defects and EMF Generation in SmS, Fiz. Tverd. Tela (S.-Peterburg), 2002, vol. 44, no. 8, pp. 1501–1505.
Kazanin, M.M., Kaminskii, V.V., and Solov'ev, S.M., Anomalous Thermoelectric Power of Samarium Monosulfide, Zh. Tekh. Fiz., 2000, vol. 70, no. 5, pp. 136–138.
Sokolov, V.V., Kamarzin, A.A., Malovitsky, Yu.N., and Mironov, K.E., Specific Growth of Rare Earth Metal Sulfide Crystals, Eur. Meet. on Crystal Growth '82: Materials for Electronics, Prague, 1982, pp. 272–273.
Chugalina, L.S., Vasil'eva, I.G., Kamarzin, A.A., et al., Indirect Gas-Chromatographic Technique for Chemical Analysis of Lanthanum Sulfides, Zh. Anal. Khim., 1978, vol. 33, no. 1, pp. 190–192.
Golubkov, A.V. and Sergeeva, V.M., On the Homogeneity Ranges of Rare-Earth Monochalcogenides, Zh. Vses. Khim. O-va. im. D. I. Mendeleeva, 1981, vol. 26, no. 6, pp. 45–53.
Vasil'ev, L.N., Kaminskii, V.V., and Romanova, M.V., Electrical Transport in Sm3S4, Fiz. Tverd. Tela (S.-Peterburg), 1996, vol. 38, no. 7, pp. 2034–2037.
Mott, N. and Davis, E., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1971. Translated under the title Elektronnye protsessy v nekristallicheskikh veshchestvakh, Moscow: Mir, 1974.
Kaminskii, V.V. and Smirnov, I.A., Rare-Earth Semiconductors in Gages for Mechanical Measurements, Prib. Sist. Upravl., 1985, no. 8, pp. 22–24.
Okhotin, A.S., Efremov, A.A., Okhotin, V.S., and Pushkarchskii, A.S., Termoelektricheskie generatory (Thermoelectric Generators), Moscow: Atomizdat, 1976.
Shadrichev, E.V., Parfen'eva, L.S., Tamarchenko, V.I., et al., Transport Behavior and Conduction Band of Semiconductor SmS, Fiz. Tverd. Tela (Leningrad), 1976, vol. 18, no. 6, pp. 2380–2386.
Kaminskii, V.V. and Romanova, M.V., Gage Factor and Resistance Temperature Coefficient of SmS, Prib. Sist. Upravl., 1988, no. 8, pp. 28–29.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Golubkov, A.V., Kazanin, M.M., Kaminskii, V.V. et al. Thermoelectric Properties of SmS x (x = 0.8–1.5). Inorganic Materials 39, 1251–1257 (2003). https://doi.org/10.1023/B:INMA.0000008909.13771.f3
Issue Date:
DOI: https://doi.org/10.1023/B:INMA.0000008909.13771.f3