Abstract
The electrical resistance of the contact between tungsten and silicon–germanium alloys of different compositions was measured as a function of temperature. The results indicate that the room-temperature contact resistance increases with increasing Ge content, annealing temperature, and annealing time. With increasing measuring temperature, the contact resistance drops to a level of the experimental error. Annealing at 1070 K tends to break down both W/p-Si–Ge and W/n-Si–Ge contacts.
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REFERENCES
Silin, L.L., Critical Issues and Future Directions in the Technology of Contacts to Silicon-Germanium Thermoelements, Fiz. Khim. Obrab. Mater., 1971, no. 2, pp. 116–125.
Braun, J.F., Application of Silicon Germanium Thermoelectric Devices for Electrical Power Production in Space, Proc. XIV Int. Conf. on Thermoelectrics, St. Petersburg, 1995, pp. 394–400.
Barbakadze, K.G., Vekua, T.S., Krivoruchko, S.P., et al., Technology of Contacts to Silicon-Germanium Thermoelectric Converters, VI Mezhgosudarstvennyi seminar po termoelektrikam i ikh primeneniyam (VI Int. Seminar on Thermoelectric Materials and Their Applications), St. Petersburg, 1999, pp. 236–240.
Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984, vol. 1.
Ytah, Y. and Hashimoto, N., Reaction-Process Dependence of Barrier Height between Tungsten Silicide and n-Type Silicon, J. Appl. Phys., 1969, vol. 40, p. 425.
Kalandadze, G., Krivoruchko, S.P., Lalykin, S.P., and Ovsyanko, I.I., Kinetics of Phosphorus Precipitation in SiGe, Fiz. Tekh. Poluprovodn. (Leningrad), 1972, vol. 6, no. 6, p. 996.
Pike, G.E. and Sweet, J.N., Electrical Characteristics of Metal/Si-Ge Contacts, J. Appl. Phys., 1975, vol. 46, pp. 4904–4920.
Kolobov, N.A. and Samokhvalov, M.M., Diffuziya i okislenie poluprovodnikov (Diffusion and Oxidation Processes in Semiconductors), Moscow: Metallurgiya, 1975.
Dudko, G.V., Kolegaev, M.A., and Panteleev, V.A., Experimental Study of Impurity Diffusion through Dislocations Produced in Silicon by Electron-Beam Heating, Fiz. Tverd. Tela (Leningrad), 1969, vol. 11, no. 5, pp. 1356–1359.
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Barbakadze, K.G., Vekua, T.S., Krivoruchko, S.P. et al. Electrical Resistance of W/Si–Ge (0–75 wt % Ge) Contacts. Inorganic Materials 39, 1227–1232 (2003). https://doi.org/10.1023/B:INMA.0000008905.54637.12
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DOI: https://doi.org/10.1023/B:INMA.0000008905.54637.12