Abstract
The results of the voltage–capacitance spectroscopy of interface states in metal–insulator–semiconductor (MIS) structures are critical functions of the accuracy in determining the insulator capacitance C i, which is typically no higher than a few fractions of a percent. This substantially limits the energy range of the observed spectrum of the interface states (ΔE ≅ 0.5 eV for Si-based MIS structures) and the sensitivity to the density of the interface states at the spectrum edges (ΔN ss ≅ 1 × 1010 cm–2 eV–1). We propose a method for minimizing these errors that is based on a sequential variation of the initial estimate C i ≅ C i 0 → C ij, j = 0, 1, 2, ... and the identification of singular points in the dependences \(\overline {\delta V_g^{ac,in} } \) and \(\overline \delta _{ac,in} \) on C ij, where \(\overline {\delta V_g^{ac,in} } \) are the mean arithmetic values of the voltage difference between the experimental and ideal voltage–capacitance characteristic and \(\overline \delta _{ac,in} \) are the rms deviations of the voltage \(\overline {\delta V_g^{ac,in} } \) values taken in the high-accumulation (ac) and inversion (in) regions from \(\delta V_g^{ac,in} \) values. The highest (≅10–4%) accuracy in determining C i is achieved in the regions of the equidistant experimental and ideal voltage–capacitance characteristic. This method, combined with the technique of Ψ s ′/Ψ s diagrams, ensures an extension of ΔE to ≅0.9 eV at ΔN ss ≅ 1 × 1010 cm–2 eV–1 and the possibility of determining the sign and density of the fixed charge in the gate insulator.
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Zhdan, A.G., Kukharskaya, N.F. & Chucheva, G.V. Improving the Accuracy in Determining the Insulator Capacitance in Metal–Insulator–Semiconductor Structures. Instruments and Experimental Techniques 47, 791–798 (2004). https://doi.org/10.1023/B:INET.0000049702.34357.44
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DOI: https://doi.org/10.1023/B:INET.0000049702.34357.44