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An Optoelectronic Switch of Voltage Polarity at a Nanovolt Level

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Abstract

A theoretical model of the contact metal topography of a photoconductive cell and a thermal model of an optoelectronic switch of the voltage polarity are considered. Expressions for photo and thermal emf of photoconductive cells with arbitrary contact metal topographies and distributions of the illumination and temperature at the cell surface are obtained. The regularities of minimization of parasitic emf of photoconductive cells are revealed. An optoelectronic switch of the voltage polarity with low levels of temperature (<2 nV/°C) and temporal (3–4 nV/h) drifts of the intrinsic emf, resistances in the ON and OFF states of ∼100 and 1012 Ω, respectively, an insulation resistance of 1011 Ω a switching time of 0.5 ms, and a transfer capacitance of 0.1 pF is developed.

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REFERENCES

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Authors and Affiliations

  1. National Academy of Sciences of Belarus, Institute of Electronics, Logoiskii trakt 22, Minsk, 220090, Belarus

    Yu. V. Trofimov, S. I. Lishik & A. S. Posed'ko

Authors
  1. Yu. V. Trofimov
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  2. S. I. Lishik
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  3. A. S. Posed'ko
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Trofimov, Y.V., Lishik, S.I. & Posed'ko, A.S. An Optoelectronic Switch of Voltage Polarity at a Nanovolt Level. Instruments and Experimental Techniques 46, 780–786 (2003). https://doi.org/10.1023/B:INET.0000008933.43511.a2

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  • DOI: https://doi.org/10.1023/B:INET.0000008933.43511.a2

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