Abstract
It was established experimentally that the degradation of MOS transistors under the action of hot carriers and ionizing radiation takes place in various ways despite the formal similarity of the degradation processes.
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Lomakin, S.S., Zebrev, G.I. Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors. Instruments and Experimental Techniques 43, 810–814 (2000). https://doi.org/10.1023/A:1026688421816
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DOI: https://doi.org/10.1023/A:1026688421816