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Electrical Properties of ZnSe Epilayers on GaAs(001)

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Inorganic Materials Aims and scope

Abstract

The electrical properties (conductivity, mobility and concentration of majority carriers, and energy spectrum of deep-level defects) of ZnSe layers grown on GaAs(001) by molecular-beam epitaxy were investigated. The results were used to assess the effects of growth rate, ZnSe surface reconstruction, and Ga indiffusion from the substrate on the parameters of the epilayers.

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REFERENCES

  1. Gutowski, J., Presser, N., and Kudlek, G., Optical Properties of ZnSe Epilayers and Films, Phys. Status Solidi A, 1990, vol. 120, pp. 11–59.

    Google Scholar 

  2. Kim, C.C., Chen, Y.P., Sivananthan, S., et al., Molecular Beam Epitaxial Growth of ZnSe on GaAs Substrates: Influence of Precursor on Interface Quality, J. Cryst. Growth, 1997, vol. 175/176, pp. 613–618.

    Google Scholar 

  3. Fujita, S., Yoshimura, N., Wu, Y.H., and Fujita, S., Surface Reconstruction and Stabilization in MOMBE of ZnSe Revealed by In-Situ Monitoring, J. Cryst. Growth, 1990, vol. 101, pp. 78–80.

    Google Scholar 

  4. Blomfield, C.J., Dharmadasa, I.M., Prior, K.A., and Cavenett, B.C., Discrete Shottky Barriers Observed for the Metal-n-ZnSe(100) System, J. Cryst. Growth, 1996, vol. 159, pp. 727–731.

    Google Scholar 

  5. Coratger, R., Girardin, C., Beauvillain, J., et al., Schottky Barrier Formation at Metal/n-ZnSe Interfaces and Characterization of Au/n-ZnSe by Ballistic Electron/ Emission Microscopy, J. Appl. Phys., 1997, vol. 81, pp. 7870–7875.

    Google Scholar 

  6. Sadof'ev, Yu.G., Heterodiffusion Behavior and Properties of MBE Ge Films on GaAs, Pis'ma Zh. Tekh. Fiz., 1993, vol. 10, no. 10, pp. 5–10.

    Google Scholar 

  7. Berman, L.S. and Lebedev, A.A., Emkostnaya spektroskopiya glubokikh tsentrov v poluprovodnikakh (Capacitance Spectroscopy of Deep Centers in Semiconductors), Leningrad: Nauka, 1981.

    Google Scholar 

  8. Denisov, A.A., Laktyushkin, V.N., and Sadof'ev, Yu.G., Deep Level Transient Spectroscopy, Obz. Elektron. Tekh., Ser. 7, 1985, issue 15 (1141).

  9. Besomi, P. and Wessels, B.W., Deep Level Defects in Heteroepitaxial Zinc Selenide, J. Appl. Phys., 1988, vol. 53, pp. 3076–3084.

    Google Scholar 

  10. Ren, W., Yang, X., and Fan, X., Deep Centers in S+ Implanted ZnSe, J. Cryst. Growth, 1990, vol. 101, pp. 454–457.

    Google Scholar 

  11. Matsumoto, T., Kokubo, N., Kawakami, K., and Kato, T., Capacitance-Voltage Characterization of n-ZnSe/n-GaAs Heterojunctions, J. Cryst. Growth, 1992, vol. 117, pp. 578–582.

    Google Scholar 

  12. Rizakhanov, M.A. and Khamidov, M.M., Photoelectrically Active and Inactive Slow Electron Sticking Centers in ZnSe Crystals, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1993, vol. 27, pp. 721–727.

    Google Scholar 

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Authors and Affiliations

  1. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924, Russia

    Yu. G. Sadof'ev

  2. Ryazan State Radio Engineering Academy, Ryazan, 390005, Russia

    V. G. Litvinov

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  1. Yu. G. Sadof'ev
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  2. V. G. Litvinov
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Sadof'ev, Y.G., Litvinov, V.G. Electrical Properties of ZnSe Epilayers on GaAs(001). Inorganic Materials 36, 1203–1207 (2000). https://doi.org/10.1023/A:1026669312246

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