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Self-Aligned SiGe MOS-Gate FET with Modulation-Doped Quantum Wire Channel for Millimeter Wave Application

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Abstract

This paper describes a self-aligned SiGe MOS-gate field-effect transistor (FET) having a modulation-doped (MOD) quantum wire channel. An analytical model based on modified charge control equations accounting for the quantum wire channel, is presented predicting the transport characteristics of the MOS-gate MODFET structure. In particular, transport characteristics of devices having strained SiGe layers, realized on Si or Ge substrates, are computed. The transconductance gm and unity-current gain cutoff frequency (fT) are also computed as a function of the gate voltage VG. The calculated values of fT suggest the operation of one-dimensional SiGe MODFETs to be around 200 GHz range at 77°K, and 120 GHz at 300°K.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Tennessee, Knoxville, Tennessee, 39962100, USA

    S. K. Islam

  2. Department of Electrical and Computer Engineering, University of Connecticut, Storrs, U-157, 260 Glenbrook Road, Connecticut, 06269-3157, USA

    F. C. Jain

Authors
  1. S. K. Islam
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  2. F. C. Jain
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Islam, S.K., Jain, F.C. Self-Aligned SiGe MOS-Gate FET with Modulation-Doped Quantum Wire Channel for Millimeter Wave Application. International Journal of Infrared and Millimeter Waves 21, 1169–1180 (2000). https://doi.org/10.1023/A:1026487714262

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  • DOI: https://doi.org/10.1023/A:1026487714262

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