Abstract
This work investigated the electrical performances of a single gate (SG) and double gate (DG) metal oxide semiconductor field-effect transistors (MOSFETs) by varying the gate length. The electrical characteristics are analyzed and parameters like ON-state current, OFF-state current, and transconductance are considered. A similar study was conducted by changing the oxide material to high-k material (HfO2). It is perceived that for gate length below 25 nm, overall channel potential starts decreasing due to increased source-drain resistance and velocity saturation owing to short channel effects. The drain current decreases as the gate length are decreased for both the SG and DG MOSFET. The transconductance also decreases inversely with the gate length for SG with the graded channel, SG with graded channel using a high-k dielectric, DG with the graded channel, and DG with graded channel using high-k dielectric.
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Lalthlamuana, J., Maity, N.P., Singh, L.L.K., Maity, R. (2021). Electrical Performance of Single Gate and Double Gate MOSFET to Optimize the Gate Length. In: Bindhu, V., Tavares, J.M.R.S., Boulogeorgos, AA.A., Vuppalapati, C. (eds) International Conference on Communication, Computing and Electronics Systems. Lecture Notes in Electrical Engineering, vol 733. Springer, Singapore. https://doi.org/10.1007/978-981-33-4909-4_52
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DOI: https://doi.org/10.1007/978-981-33-4909-4_52
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