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Investigation into the Mechanism of Oxidation on the Surface of Lead Selenide Semiconductor Structures

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Abstract

The oxidation of lead selenide samples prepared in the form of ground powders, pressed pellets, polycrystalline films, and faceted crystals is investigated. All samples are produced from a lead selenide batch heat treated under dynamic vacuum. The bulk and surface structural and phase compositions of the samples upon oxidation in dry air at temperatures of 298–773 K are studied using electron microscopy, X-ray diffractometry, and Auger electron probe microanalysis. The dependence of the resistivity of polycrystalline films and pressed pellets is analyzed in the temperature range 298–498 K in dry air and argon. It is demonstrated that the specific features in the temperature dependences of the resistivity of oxidized PbSe samples can be associated with their microstructure and environmental conditions. It is revealed that the PbSeO3 phase is formed on the surface of all the PbSe samples starting from room temperature, whereas no phase transformations are observed in the bulk of samples.

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Authors and Affiliations

  1. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, ul. Odoevskogo 24/2, St. Petersburg, 199155, Russia

    V. P. Popov & P. A. Tikhonov

  2. St. Petersburg State University of Electrical Engineering, ul. Prof. Popova 5, St. Petersburg, 197376, Russia

    V. V. Tomaev

Authors
  1. V. P. Popov
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  2. P. A. Tikhonov
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  3. V. V. Tomaev
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Popov, V.P., Tikhonov, P.A. & Tomaev, V.V. Investigation into the Mechanism of Oxidation on the Surface of Lead Selenide Semiconductor Structures. Glass Physics and Chemistry 29, 494–500 (2003). https://doi.org/10.1023/A:1026399332312

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