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1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD

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Abstract

Polarization-insensitive AlGaInAs'InP semiconductor optical amplifier is realized at wavelength of 1.55 μ. The active layer consists of three tensile strained wells with strain of 0.40%. The amplifier is fabricated to ridge waveguide structure. The testing result shows the amplifiers have excellent polarization insensitivity (less than 0.8dB). The 1540 nm wavelength optical gain is 20 dB at the bias current of 200 mA.

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Authors and Affiliations

  1. Department of Opto-electronic Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China;

    Hong Ma, Xinjian Yi & Sihai Chen

Authors
  1. Hong Ma
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  2. Xinjian Yi
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  3. Sihai Chen
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Ma, H., Yi, X. & Chen, S. 1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD. Optical and Quantum Electronics 35, 1107–1112 (2003). https://doi.org/10.1023/A:1026268124272

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  • DOI: https://doi.org/10.1023/A:1026268124272

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