Abstract
According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper. A wire rib waveguide with sub-micrometer cross section is adopted. The device is only about 2 mm long. The power consumption of the VOA is 76.3 mW (0.67 V, 113.9 mA), and due to the carrier absorption, the polarization dependent loss (PDL) is 0.1 dB at 20 dB attenuation. The raise time of the VOA is 34.5 ns, the fall time is 37 ns, and the response time is 71.5 ns.
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Hidetaka Nishi, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Sungbong Park, Rai Kou, Koji Yamada and Sei-ichi Itabashi, Applied Physics Express 3, 102203 (2010).
Dai Hongqing, An Junming, Wang Yue, Zhang Jiashun, Wang Liangliang, Wang Hongjie, Li Jianguang, Wu Yuanda, Zhong Fei and Zha Qiang, Journal of Semiconductors 35, 104010–1 (2014).
Dazeng Feng, Ning-Ning Feng, Cheng-Chih Kung, Hong Liang, Wei Qian, Joan Fong, B. Jonathan Luff and Mehdi Asghari, Optics Express 19, 6125 (2011).
Yuan Pei, Wu Yuanda, Wang Yue, An Junming and Hu Xiongwei, Journal of Semiconductors 36, 084005 (2015).
Nurjuliana Juhari, P Susthitha Menon, Abang Annuar Ehsan and Sahbudin Shaari, Journal of Nonlinear Optical Physics & Materials 23, 1450008 (2014).
Tong Ye, Yunfei Fu, Lei Qiao and Tao Chu, Optics Express 22, 31899 (2014).
Zhang Jiashun, An Junming, Zhao Lei, Song Shijiao, Wang Liangliang, Li Jianguang, Wang Hongjie, Wu Yuanda and Hu Xiongwei, Journal of Semiconductors 32, 044009 (2011).
You Min Chang, Junsu Lee, Young Min Jhon and Ju Han Lee, Optics Express 19, 26911 (2011).
Pengfei Qu, Weiyou Chen, Fumin Li, Caixia Liu and Wei Dong, Optics Express 16, 20334 (2008).
Kei Watanabe, Yasuaki Hashizume, Yusuke Nasu, Masaki Kohtoku, Mikitaka Itoh and Yasuyuki Inoue, Journal of Lightwave Technology 26, 2235 (2008).
Cong Chen, Zhi-wei Xu, Meng Wang and Hai-yan Chen, Optoelectronics Letters 10, 427 (2014).
Juan Zhang, Ling-zhen Yang, Nai-jun Xu, Juan-fen Wang, Zhao-xia Zhang and Xiang-lian Liu, Optoelectronics Letters 10, 232 (2014).
Shinsuke Tanaka, Seok-Hwan Jeong, Shigeaki, Sekiguchi, Teruo Kurahashi, Yu Tanaka and Ken Morito, Optics Express 20, 28057 (2012).
Jianfeng Ding, Hongtao Chen, Lin Yang, Lei Zhang, Ruiqiang Ji, Yonghui Tian, Weiwei Zhu, Yangyang Lu, Ping Zhou, Rui Min and Mingbin Yu, Optics Express 20, 70811 (2012).
Yang Liu and Guo-an Zhang, Optoelectronics Letters 10, 273 (2014).
He Yue-Jiao, Li Fang and Liu Yu-Liang, Chinese Physics Letter 22, 95 (2005).
Qingfeng Yan, Jinzhong Yu, Jinsong Xia and Zhongli Liu, Chinese Optics Letters 1, 217 (2003).
Hidetaka Nishi, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Koji Yamada and Sei-ichi Itabashi, Japanese Journal of Applied Physics 49, 04DG20 (2010).
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This work has been supported by the National High Technology Research and Development Program of China (No.2013AA031402).
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Yuan, P., Wu, Yd., Wang, Y. et al. A fast SOI-based variable optical attenuator with a p-i-n structure with low polarization dependent loss. Optoelectron. Lett. 12, 20–22 (2016). https://doi.org/10.1007/s11801-016-5234-z
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DOI: https://doi.org/10.1007/s11801-016-5234-z