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Effect of annealing on the structure and d.c. conductivity of a-Se70In15Ge15 thin films

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Abstract

Amorphous thin films of Se–In–Ge have been prepared by the flash evaporation technique. Electrical conductivity assessment has been carried out on these films in the temperature range 300–425 K. The films have been annealed at 413 K for 2, 4, 6, 8, and 10 h. These films show a transformation from the amorphous to the crystalline state. The temperature dependence of the electrical conductivity for all annealing times has been recorded and discussed. The results were analyzed in order to establish the activation energy at each state. The value of the exponent (n) of the Avrami rate equation depends on annealing temperature, and indicates that the crystals grow in two or three dimensions.

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  1. Basic Science of Engineering Department, Faculty of Engineering, Shebin, El-Kom, Menoufiya University, Egypt

    El-sayed M. Farag

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  1. El-sayed M. Farag
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Farag, Es.M. Effect of annealing on the structure and d.c. conductivity of a-Se70In15Ge15 thin films. Journal of Materials Science: Materials in Electronics 15, 19–23 (2004). https://doi.org/10.1023/A:1026228601981

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