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Control of the Properties of Thin‐Film Systems with the Use of Pulsed Photon Treatment

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Journal of Engineering Physics and Thermophysics Aims and scope

Abstract

We have developed a radically new technological process of making very large‐scale integrated circuits, which has no analogs and is based on the use of fast heat treatments for forming gettering layers, silicon oxidation, annealing of ion‐doped layers, fusion of phosphoro‐ and borophosphorosilicate glasses, forming silicides, and increasing the thermostability of aluminum metallization.

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REFERENCES

  1. V. M. Anishchik, V. A. Gorushko, V. A. Pilipenko, V. N. Ponomar’, V. V. Ponaryadov, and I. V. Pilipenko, in: Physical Principles of Fast Thermal Treatment. Temperature Fields and Structural Features of Equipment[in Russian], Minsk (2000), pp. 56-60.

  2. V. M. Anishchik, V. A. Gorushko, V. A. Pilipenko, V. N. Ponomar’, and V. V. Ponaryadov, in: Physical Principles of Fast Thermal Treatment. Gettering, Annealing of Ion-Doped Layers, Fast Thermal Treatment in the Technology of Very Large-Scale Integrated Circuits[in Russian], Minsk (2001), pp. 25-44.

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Authors and Affiliations

  1. Scientific‐Production Association “Integral,”, Unitary Enterprise “Belmikrosistemy,”, Minsk, Belarus

    V. A. Pilippenko, V. N. Ponomar' & V. A. Gorushko

Authors
  1. V. A. Pilippenko
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  2. V. N. Ponomar'
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  3. V. A. Gorushko
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Pilippenko, V.A., Ponomar', V.N. & Gorushko, V.A. Control of the Properties of Thin‐Film Systems with the Use of Pulsed Photon Treatment. Journal of Engineering Physics and Thermophysics 76, 854–857 (2003). https://doi.org/10.1023/A:1025610507391

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  • DOI: https://doi.org/10.1023/A:1025610507391

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