Abstract
Thin-film Mo–SiO2 + C–Al systems are investigated. It is demonstrated that the electrical properties of these systems depend strongly on the percentage of carbon in a composite Si + C target at the stage of preparing the dielectric. The results obtained are interpreted in the context of the chemical interaction of carbon with silicon dioxide.
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Troyan, P.E., Zhigal'skii, A.A. & Sakharov, Y.V. Role of Carbon in the Electric Forming of Metal–Dielectric–Metal Systems. Russian Physics Journal 46, 145–148 (2003). https://doi.org/10.1023/A:1024637811468
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DOI: https://doi.org/10.1023/A:1024637811468