The effect of f–d interaction on the current–voltage characteristics of metal–dielectric–metal (MDM) structures consisting of contacting layers of d metals (Fe, Co, Ni) and rare-earth metal (REM) oxides is studied. The f–d exchange interaction between atoms with unfilled f and d electron shells in the thin-film (Fe, Co, Ni)/Tb2O3/(Fe, Co, Ni) MDM structure significantly decreases the potential barrier to transfer of charges between the electrodes. The force and energy of f–d interaction that influence the movement of an electron in the MDM structure have been determined in conditions of the overbarrier charge transfer mechanism. The effect of f–d interaction on the current–voltage characteristics of MDM structures weakens with higher temperature and enhances with stronger magnetic field. This may be associated with the influence of these factors on the ordering of magnetic moments of f and d atoms in the f–d interaction region.
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References
R. Bidaux, I.E. Bouree, and I. Hammann, “Dipolar interaction in rare earth orthoferrites YFeO3 and HoFeO3,” J. Phys. Chem. Solids, 35, 1645–1655 (1974).
H.A. Katori, T. Goto, I.Yu. Gaidukova, R.Z. Levitin, A.S. Markosyan, I.S. Dubenko, and A.Yu. Sokolov, “Influence of the f-d exchange interaction on the magnetic state of the itinerant d subsystem and fieldinduced magnetic phase transitions in the intermetallic compounds Y1–tGdtCo3,” IETP, 79, No. 5, 805–810 (1994).
K. Takanashi, Y. Kamiguchi, H. Fujimori, and M. Motokava, “Magnetization and magnetoresistance of Fe/Gd ferromagnetic multilayer films,” J. Phys. Soc. Jpn., 61, No. 10, 3721–3731 (1992).
K. Kawaguchi, M. Sohma, and T. Manago, “Perpendicular magnetic anisotropy of R2O3/Fe multilayers,” J. Magn. Magn. Mater., 198–199, 513–515 (1999).
A.M. Kasumov, V.M. Karavaeva, A.A. Mykitchenko, K.O. Shapoval, M.A. Perepelytsia, and G.V. Lashkariov, “Galvanomagnetic properties of thin-film (Fe, Co, Ni)/Rare earth metal oxide structures,” Powder Metall. Met. Ceram., 57, No. 5–6, 325–328 (2018).
A.M. Kasumov, V.M. Karavaeva, K.O. Shapoval, M.A. Perepelytsia, and G.V. Lashkarov, “Enhancement of the Faraday effect in thin film structure Tb2O3/Fe due to f–d layer interaction,” Nanosist. Nanomater. Nanotechnol., 16, No. 1, 181–189 (2018).
G.I. Epifanov, Physical Fundamentals of Microelectronics [in Russian], Sov. Radio, Moscow (1971), p. 375.
I.G. Simmons, “Electronic conduction through insulating films,” in: L.I. Maissel and R. Glang (ed.), Handbook of Thin Film Technology, New York (1970), Part 3, p. 753.
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Translated from Poroshkova Metallurgiya, Vol. 58, Nos. 9–10 (529), pp. 100–106, 2019.
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Kasumov, A., Shapoval, K., Karavayeva, V. et al. Effect of the F–D Exchange Interaction on the Properties of Thin-Film Mdm Structures (M—Fe, Co, Ni; D—Tb2O3). Powder Metall Met Ceram 58, 576–580 (2020). https://doi.org/10.1007/s11106-020-00112-1
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DOI: https://doi.org/10.1007/s11106-020-00112-1