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Thermally Stimulated Currents in MnGaInS4 Single Crystals

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Inorganic Materials Aims and scope

Abstract

Thermally stimulated current measurements indicate that MnGaInS4 single crystals contain fast trapping centers. The trap depths, concentrations, and capture cross sections are determined. The results obtained by the thermal cleaning method demonstrate that the band gap of MnGaInS4 contains two trapping levels with exponential energy distributions: 0.05–0.20 and 0.16–0.25 eV.

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Authors and Affiliations

  1. Azerbaijani State Pedagogical University, ul. Gadzhibekova 34, Baku, 370000, Azerbaijan

    N. N. Niftiev & O. B. Tagiev

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  1. N. N. Niftiev
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  2. O. B. Tagiev
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Niftiev, N.N., Tagiev, O.B. Thermally Stimulated Currents in MnGaInS4 Single Crystals. Inorganic Materials 39, 576–578 (2003). https://doi.org/10.1023/A:1024040901510

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