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Electrical Properties and Ferromagnetism in (Ga,Cr)As

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Abstract

MBE-grown (Ga,Cr)As has interesting electric and magnetic properties. Ga1−x Cr x As with x = 0.1 exhibits short-range ferromagnetic behavior at low temperatures. This is manifest in several anomalous properties: magnetization does not scale with B/T; fitting M(B) requires a model of distributed magnetic cluster or polarons; and inverse susceptibility is nonliner in T (non-Curie–Weiss) at low fields. At room temperature, the conductivity is activated and Hall measurements yield a hole concentration of ∼1020 cm−3, indicating that chromium acts as an acceptor similar to Mn in GaAs. For decreasing temperature, the conductivity decreases by eight orders of magnitude and follows σ ∼ exp(1/T 1/2).

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References

  1. S. Datta and B. Das, Appl. Phys. Lett. 56, 665(1990).

    Google Scholar 

  2. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservy, Phys. Rev. Lett. 74, 3273(1995).

    Google Scholar 

  3. G. A. Prinz, Science 282, 1660(1998).

    Google Scholar 

  4. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, and S. von Molnar, Science 294, 1488(2001).

    Google Scholar 

  5. D. D. Awschalom, N. Samarth, and D. Loss, Semiconductor Spintronics and Quantum Computation (Springer, New York, 2002).

    Google Scholar 

  6. H. Ohno, Science 281, 951(1998).

    Google Scholar 

  7. J. de Boeck, R. Oesterholt, A. van Esch, H. Bender, C. Bruynseraede, C. van Hoof, and G. Borghs, Appl. Phys. Lett. 68, 2744(1996).

    Google Scholar 

  8. F. Matsukura, H. Ohno, and T. Dietl, in Handbook of Magnetic Materials, K. H. J. Buschow, ed. (Elsevier Science, New York, 2002), Vol. 14, 1–87.

    Google Scholar 

  9. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 69, 363(1996).

    Google Scholar 

  10. M. van Schilfgaarde and O. N. Mryasov, Phys. Rev. B 63, 233205(2001).

    Google Scholar 

  11. H. Akinaga, T. Manago, and M. Shirai, Jpn. J. Appl. Phys. 39, L1118(2000).

    Google Scholar 

  12. J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, and H. Ohno, Appl. Phys. Lett. 79, 2667(2001).

    Google Scholar 

  13. M. Yamada, K. Ono, M. Mizuguchi, J. Okabayashi, M. Oshima, M. Yuri, H. J. Lin, H. H. Hsieh, C. T. Chen, and H. Akinaga, J. Appl. Phys. 91, 7908(2002).

    Google Scholar 

  14. H. Saito, W. Zaets, R. Akimoto, K. Ando, Y. Mishima, and M. Tanaka, J. Appl. Phys. 89, 7392(2001).

    Google Scholar 

  15. A. Dakhama, B. Lakshmi, and D. Heiman, Phys. Rev. B (2002).

  16. M. Mizuguchi, H. Akinaga, T. Manago, K. Ono, M. Oshima, M. Shirai, M. Yuri, H. J. Lin, H. H. Hsieh and C. T. Chen, J. Appl. Phys. 91, 7917(2002).

    Google Scholar 

  17. D. Heiman, P. Becla, R. Kershaw, D. Ridgley, K. Dwight, A. Wold and R. R. Galazka, Phys. Rev. B 34, 3961(1986).

    Google Scholar 

  18. P. A. Wolff, in Dilute Magnetic Semiconductors, J. K. Furdyna and J. Kossut, eds. (Academic Press, Boston, 1988), Vol. 25, pp. 413–454.

    Google Scholar 

  19. Y. Shapira, S. Foner and T. B. Reed, Phys. Rev. B 8, 2299(1973).

    Google Scholar 

  20. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019(2000).

    Google Scholar 

  21. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Vol. 45 (Springer-Verlag, New York, 1984).

    Google Scholar 

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Dakhama, A., Feinstein, C. & Heiman, D. Electrical Properties and Ferromagnetism in (Ga,Cr)As. Journal of Superconductivity 16, 59–62 (2003). https://doi.org/10.1023/A:1023276416177

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