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Anisotropic resistivity and electroresistance in epitaxial La0.3Pr0.4Ca0.3MnO3 thin films

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Abstract

The effects of anisotropic strain (AS) are considered in La0.3Pr0.4Ca0.3MnO3 films produced by pulsed laser deposition on [001]-oriented NdGaO3 substrates via magnetic and resistivity measurements along with the two orthogonal in-plane directions. The anisotropic resistance is manifested with various degrees due to the different strengths of anisotropic strain that can be controlled with film thicknesses. The temperature-dependent resistivity was measured along with the two orthogonal directions. The anisotropic resistivity (AR) originated from different percolation paths in films and reached an extraordinary value of ~ 107% for the film, with a thickness of 50 nm. On the other hand, the enhanced AR reveals that the AS induces electronic phase separation with ferromagnetic metallic entities’ appearance with preferred orientation along (100) direction in an antiferromagnetic insulating background. Besides, we examined the effects of electric current on the resistivity of films. It is found that the application of larger currents results in a dramatic reduction of film resistance, and the extraordinary value of the electroresistance (~ 97%) was obtained by increasing the current from 0.01 to 10 µA. We attribute this behavior to the percolative channels with a width comparable to the mesoscopic phase-separated domains.

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Acknowledgements

The authors would like to thank Iran National Science Foundation (INSF) for this project's financial support.

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Authors and Affiliations

  1. Department of Physics, Isfahan University of Technology, 84156-83111, Isfahan, Iran

    M. Zarifi, P. Kameli, A. Ghotbi Varzaneh, E. Hosseini, M. Norouzi-Inallu & H. Ahmadvand

  2. Département de Physique, Institut Quantique, Université de Sherbrooke, Sherbrooke, QC, J1K 2R1, Canada

    M. Abbasi Eskandari

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  1. M. Zarifi
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Zarifi, M., Kameli, P., Ghotbi Varzaneh, A. et al. Anisotropic resistivity and electroresistance in epitaxial La0.3Pr0.4Ca0.3MnO3 thin films. Appl. Phys. A 128, 175 (2022). https://doi.org/10.1007/s00339-022-05292-8

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