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Electric Field Effect on the Magnetic Properties of III–V Ferromagnetic Semiconductor (In,Mn)As and ((Al),Ga,Mn)As

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Abstract

We have investigated the magnetotransport properties of field-effect transistors (FET) having a III–V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature T C but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.

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Authors and Affiliations

  1. Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan

    D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani & H. Ohno

Authors
  1. D. Chiba
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  2. M. Yamanouchi
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  3. F. Matsukura
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  4. E. Abe
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  5. Y. Ohno
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  6. K. Ohtani
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  7. H. Ohno
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Chiba, D., Yamanouchi, M., Matsukura, F. et al. Electric Field Effect on the Magnetic Properties of III–V Ferromagnetic Semiconductor (In,Mn)As and ((Al),Ga,Mn)As. Journal of Superconductivity 16, 179–182 (2003). https://doi.org/10.1023/A:1023238229806

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  • DOI: https://doi.org/10.1023/A:1023238229806

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