Formation of Ti_1–x Si _x and Ti_1–x Si _x N films by magnetron co-sputtering

Abstract

The paper reports on surface morphology, structure and microhardness of TiSi–N films formed by cosputtering from two target-facing unbalanced magnetrons, equipped with pure Ti and Si targets, on an unheated substrate rotating in front of both targets. The ratio Si/Ti in the TiSi–N film was achieved by modifying the magnitude of currents in the individual magnetrons and by the addition of nitrogen to the film. The rotation of the substrate has a strong effect on the film deposition rate and its morphology. The deposition rate is 3 times lower than that of the film deposited on a stationary substrate. The surface roughness of a polycrystalline Ti film deposited on the rotating substrate is considerably higher than that on a stationary substrate. On the contrary, the surface of an amorphous Si film is smooth and there is no difference between the roughness of Si films sputtered on stationary and on rotating substrates. The hardness of the film increases with increasing Si content and with the addition of nitrogen to the TiSi film. The Ti(26 at.%)Si(8.5 at.%)N(65 at.%)-film sputtered on an unheated rotating steel substrate, held at a floating potential, exhibited the best result with a hardness of 29 GPa.