Abstract
Thin film Al/Sb2Pb1Se7/Al metal-glass-metal sandwiched structures prepared using thermal evaporation technique have been studied. The I–V measurements showed that the devices switched from high resistance ‘OFF’ state to a low resistance ‘ON’ state when a particular voltage appeared across it. The ‘OFF’ state I–V characteristics showed non-ohmic behaviour while in the ‘ON’ state the devices displayed purely linear characteristics. The switching voltage (V th) was found to depend on film thickness and temperature of the device. A linear relation between Vth and temperature was observed.
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Wagle, S., Shirodkar, V. Current controlled negative resistance phenomenon in SbPbSe system. Czechoslovak Journal of Physics 50, 635–643 (2000). https://doi.org/10.1023/A:1022810402344
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DOI: https://doi.org/10.1023/A:1022810402344