Skip to main content
SpringerLink
Log in

Temperature dependence of high field transport in ZnS

  • Published:
Czechoslovak Journal of Physics Aims and scope

Abstract

High field transport process in ZnS in the temperature range of (10–500) K was simulated by help of Monte Carlo method. The band structure of ZnS is described by analytical fitting of real band structure. Phonon scattering, spatial charge scattering, and impact ionization process are included in the simulation. The phonon scattering rates at different temperatures are calculated and compared. The transient acceleration time of electrons in ZnS is found to be temperature-independent. We attribute this result to the compensation of two opposite factors in ZnS. Average energy of electrons decreases with temperature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Brennan: J. Appl. Phys. 64 (1988) 4024.

    Google Scholar 

  2. R. Mach and G.O. Muller: J. Cryst. Grow 101 (1990) 967.

    Google Scholar 

  3. H.J. Fitting. J. Cryst. Grow 101 (1990) 876.

    Google Scholar 

  4. K. Bhattacharyya, S.M. Goodnick, and J.F. Wager: J. Appl. Phys. 73 (1993) 3390.

    Google Scholar 

  5. J. Fogarty, W. Kong, and R. Solanki: Solid-State Electronics 38 (1995) 653.

    Google Scholar 

  6. S.M. Goodnick, M. Duer, and S. Pennathur: Inorganic and Organic Electroluminescence, World Scientific, Singapore, 1996, p. 13.

    Google Scholar 

  7. M. Duer, S.M. Goodnick, S. Pennathur, J.F. Wager, M. Reigrotzki, and R. Redmer: J. Appl. Phys. 83 (1998) 3176.

    Google Scholar 

  8. E. Bellotti, K. Brennan, R. Wang, and P.P. Ruden: J. Appl. Phys. 83 (1998) 4765.

    Google Scholar 

  9. I. Lee, S. Pennathur, S.M. Goodnick, and J.F. Wager: J. Korean Phys. Soc. 31 (1997) 517.

    Google Scholar 

  10. H. Zhao, Y.S. Wang, Z. Xu, and X.R. Xu: J. Phys.: Cond. Matt. 11 (1999) 2145.

    Google Scholar 

  11. H. Zhao, Y.S. Wang, Z. Xu, and X.R. Xu: Semicond. Sci. Technol. 14 (1999) 1098.

    Google Scholar 

  12. H. Zhao, Y.S. Wang, Z. Xu, and X.R. Xu: Acta Physica Polonica A 96 (1999) 475.

    Google Scholar 

  13. H. Zhao, Y.S. Wang, Z. Xu, and X.R. Xu: Science in China E 42 (1999) 282.

    Google Scholar 

  14. R. Brunetti, C. Jacoboni, F. Venturi, E. Sangiorgi, and B. Ricco: Solid State Electronics 32 (1989) 1663.

    Google Scholar 

  15. X. Wang, V. Chandramouli, C.M. Maziar, and A.F. Tasch: J. Appl. Phys. 73 (1993) 3339.

    Google Scholar 

  16. O. Mouton, J.L. Thobel, and R. Fauquembergue: J. Appl. Phys. 81 (1991) 3160.

    Google Scholar 

  17. M. Reigrotzki, M. Stobbe, and R. Redmer: Phys. Rev. B 52 (1995) 1456.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing, 100044, P. R. China

    Hui Zhao, Yongsheng Wang, Zheng Xu & Xurong Xu

Authors
  1. Hui Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yongsheng Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Zheng Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Xurong Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhao, H., Wang, Y., Xu, Z. et al. Temperature dependence of high field transport in ZnS. Czechoslovak Journal of Physics 50, 1159–1167 (2000). https://doi.org/10.1023/A:1022808818717

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1022808818717

Keywords

Search

Navigation