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Synthesis and Growth of New Compounds Au3In5Se9 and Au3Ga5Se9

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Abstract

The phase analysis was performed and a character of interaction in AuInSe2 - In2Se3 and AuGaSe2 -Ga2Se3 quasi-binary systems were considered. The technology of synthesis and growth of single crystals of new semiconducting compounds Au3In5Se9 and Au3Ga5Se9 were developed. The materials for ohmic contacts were chosen and the electrical, optical and thermal properties of obtained compounds have been investigated. The forbidden band gap, its temperature coefficient, the type of the optical transitions and heat capacity of Au3In5Se9 and Au3Ga5Se9 compounds were determined. The charge of entropy and enthalpy has been estimated by numerical integration.

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Authors and Affiliations

  1. Baku State University, Baku-, 370145, Z. Khalilov Av.23, Azerbaijan Republic

    N. F. Kahramanov, S. S. Sadulova & H. A. Bakirov

  2. Information Technologies Institute, TÜBITAK-MRC, 41470, Gebze, Kocaeli, Turkey

    S. R. Samedov

Authors
  1. N. F. Kahramanov
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  2. S. R. Samedov
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  3. S. S. Sadulova
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  4. H. A. Bakirov
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Kahramanov, N.F., Samedov, S.R., Sadulova, S.S. et al. Synthesis and Growth of New Compounds Au3In5Se9 and Au3Ga5Se9 . International Journal of Infrared and Millimeter Waves 20, 635–644 (1999). https://doi.org/10.1023/A:1022696607313

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  • DOI: https://doi.org/10.1023/A:1022696607313

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