Skip to main content
SpringerLink
Log in

The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-T c Films

  • Published:
Journal of Superconductivity Aims and scope Submit manuscript

Abstract

The in situ process—laser ablation in combination with thermal evaporation of Tl2O—has turned out to be a preparation method for single-phase and epitaxial TlBa2Ca2Cu3O9 (1223) thin films with T c values up to 109 K. It was found by several groups that a partial substitution of Tl by Bi simplifies the phase development of the 1223 compound in the usual two-step process. We have investigated the influence of the Bi doping on the in situ growth. X-ray measurements show that the films consisted mainly of the 1223 compound. In 300-nm thin films there was no evidence of a Bi amount in the crystal structure, but thinner films (80 nm) show a small amount of Bi. We concluded that Bi doping supports the phase development of the 1223 compound only in an early stage of the film growth. The Bi-doped films have higher T c values up to 114 K, higher j c values up to 6 × 105 A/cm2 (77 K, 0 T), and lower surface resistances of 56 mΩ (77 K, 87 GHz) than the undoped films.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. C. Martin, C. Michel, A. Maignan, M. Hervieu, and B. Raveau, C. R. Acad. Sci. Paris 307, Ser. II, 27 (1988).

    Google Scholar 

  2. J. Y. Juang, J. H. Hornig, S. P. Chen, C. M. Fu, K. H. Wu, T. M. Uen, and Y. S. Gon, Appl. Phys. Lett. 66, 885 (1995).

    Google Scholar 

  3. T. Nabatame, Y. Saito, K. Aihara, T. Kamo, and S.-P. Matsuda, Jpn. J. Appl. Phys. 32, L484 (1993).

    Google Scholar 

  4. A. Piehler, N. Reschauer, U. Spreitzer, J. P. Ströbel, R. Schönberger, and K. F. Renk, Appl. Phys. Lett. 65, 1451 (1994).

    Google Scholar 

  5. J. E. Tkaczyk, J. A. DeLuca, P. L. Karas, P. J. Bednarczyk, D. K. Christen, C. E. Klabunde, and H. R. Kerchner, Appl. Phys. Lett. 62, 3031 (1993).

    Google Scholar 

  6. D. W. Face and J. P. Nestlerode, Appl. Phys. Lett. 61, 1838 (1992).

    Google Scholar 

  7. N. Reschauer, U. Spreitzer, W. Brozio, A. Piehler, K. F. Renk, R. Berger, and G. Saemann-Ischenko, Appl. Phys. Lett. 68, 1000 (1996).

    Google Scholar 

  8. A. Piehler, J. P. Ströbel, N. Reschauer, R. Löw, R. Schönberger, K. F. Renk, M. Kraus, J. Daniel, and G. Saemann-Ischenko, Physica C 223, 391 (1994).

    Google Scholar 

  9. Z. F. Ren and J. H. Wang, Physica C 216, 199 (1993).

    Google Scholar 

  10. Y. Torii, T. Kontani, H. Takei, and K. Tada, Jpn. J. Appl. Phys. 28, L1190 (1989).

    Google Scholar 

  11. U. Spreitzer, T. Mayerhöfer, N. Reschauer, R. Löw, K.-J. Range, M. Kraus, P. Van Hasselt, J. Markl, P. Müller, and K. F. Renk, J. Low Temp. Phys. 105(No. 5/6), 1371 (1996).

    Google Scholar 

  12. N. Reschauer, U. Spreitzer, W. Brozio, A. Piehler, K. F. Renk, R. Berger, and G. Saemann-Ischenko, in High Temperature Superconductors, U. Balachandran, P. J. McGinn, and J. S. Abel eds, (TMS, Warrendale, Pennsylvania, 1996), p. 339.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040, Regensburg, Germany

    N. Reschauer, H. H. Wagner, W. Brozio, U. Spreitzer, T. Schauer & K. F. Renk

  2. Physik Department E10, Technische Universität München, 85747, Garching, Germany

    N. Reschauer

  3. Department of Engineering Science, University of Oxford, Oxford, OX1 PJ, UK

    J. D. O'Connor & D. Dew-Hughes

  4. Department of Materials, University of Oxford, Oxford, OX1 PJ, UK

    M. J. Goringe & C. R. M. Grovenor

  5. Fachbereich Physik, Bergische Universität GH Wuppertal, 42097, Wuppertal, Germany

    T. Kaiser & H. Piel

Authors
  1. N. Reschauer
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. H. Wagner
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. Brozio
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. U. Spreitzer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. T. Schauer
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. K. F. Renk
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. D. O'Connor
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. D. Dew-Hughes
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. M. J. Goringe
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. C. R. M. Grovenor
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. T. Kaiser
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. H. Piel
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Reschauer, N., Wagner, H.H., Brozio, W. et al. The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-T c Films. Journal of Superconductivity 11, 603–607 (1998). https://doi.org/10.1023/A:1022639430125

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1022639430125

Search

Navigation