Abstract
Thin films of TI1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet. and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep =methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TIF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc > 104 A/cm2 (77 K. 0 T) and at low temperatures retain Jc > 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.
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McNeely, R.J., Belot, J.A., Schindler, J.L. et al. Novel Metal-Organic Chemical Vapor Deposition / T1F Annealing Route to Thin Films of Tl1Ba2Ca2Cu3O9+x . Journal of Superconductivity 11, 133–134 (1998). https://doi.org/10.1023/A:1022635424576
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DOI: https://doi.org/10.1023/A:1022635424576