Abstract
The conditions are examined for the formation of Al y In1 – y Sb1 – x Bi x solid solutions on InSb substrates. The grown heterostructures are potentially attractive as the basis for the next generation of optoelectronic devices—superlattice-based avalanche photodiodes.
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Alfimov, A.V., Blagin A.V., Lunin L.S. The Epitaxial Growth of Thin Films GaAsP〈Bi〉 in the Field of Temperature Gradient, 3rd Int. Conf. on Single Crystal Growth, Strength Problems, and Heat Mass Transfer, Obninsk, 1999, pp. 72–73.
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Blagin, A.V. Al y In1 – y Sb1 – x Bi x /InSb Photodetecting Superlattices. Inorganic Materials 39, 220–221 (2003). https://doi.org/10.1023/A:1022609104599
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DOI: https://doi.org/10.1023/A:1022609104599