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Long-wave infrared emission properties of strain-balanced InAs/InxGa1−xAsySb1−y type-II superlattice on different substrates

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Abstract

High-performance type-II superlattices of III–V semiconductor materials play an important role in the development and application of infrared optoelectronic devices. Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practical applications. In this work, strain-balanced and high-quality InAs/InxGa1−xAsySb1−y superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully. Superlattices grown on InAs substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) measurements’ results. Moreover, the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious. In addition, the optical properties of superlattices grown on different substrates are discussed systematically. Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates, the superlattices grown on InAs substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission. Finally, the thermal quenching of emission intensity indicates that the superlattices grown on the InAs substrate have better recombination ability, which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

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摘要

基于III–V型半导体材料的高性能ii型超晶格在红外光电子器件的发展和应用中发挥着重要作用. 提高外延材料的质量和阐明其发光机理对实际应用具有重要意义. 本文在InAs和GaSb衬底上实现了应变平衡且无晶格失配的高质量InAs/InxGa1−xAsySb1−y超晶格. 高分辨率x射线衍射和原子力显微镜测量结果表明, 在InAs衬底上生长的超晶格表现出更优异的晶体质量和较小的表面粗糙度. 几何相位分析的应变分布结果表明, GaSb衬底超晶格中合金成分的波动更为明显. 此外, 还系统地讨论了基于不同衬底超晶格的光学特性. 由于不同衬底上的元素组分波动和界面粗糙度的差异, 生长在InAs衬底上的超晶格在长波红外发射的光谱对应的半峰宽较小且具有更高的积分强度. 最后, 发射光谱积分强度的热猝灭表明, 生长在InAs衬底上的超晶格具有更好的辐射复合能力, 这有利于提高基于这种衬底超晶格的红外光电探测器件的工作温度.

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Acknowledgements

This study was financially supported by the National Natural Science Foundation of China (Nos. 62074018, 62174015 and 62275032), the Developing Project of Science and Technology of Jilin Province (No. 20210509061RQ), the Natural Science Foundation of Jilin Province (No. 20210101473JC). National Key R&D Program of China (No. 2021YFB3201901). The Natural Science Foundation of Chongqing China (No. cstc2021jcyjmsxmX1060). This work was also supported by R&D project of Collighter Co., Ltd and we are grateful to Prof. Peng Du for the help with the novel MBE system and FMA growth method.

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Authors and Affiliations

  1. State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun, 130022, China

    Chao Shi, Xuan Fang, Hong-Bin Zhao, Deng-Kui Wang, Xi Chen, Dan Fang, Xiao-Hua Wang & Jin-Hua Li

  2. State Key Laboratory of Advanced Materials for Smart Sensing, China General Research Institute for Nonferrous Metals, Beijing, 100088, China

    Hong-Bin Zhao

  3. Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China

    Dong-Bo Wang

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  1. Chao Shi
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Shi, C., Fang, X., Zhao, HB. et al. Long-wave infrared emission properties of strain-balanced InAs/InxGa1−xAsySb1−y type-II superlattice on different substrates. Rare Met. (2024). https://doi.org/10.1007/s12598-024-02655-3

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