Abstract
The effect of high-temperature vacuum annealing (≃10–6 Pa, 1330°C) on the Er distribution in the near-surface region (several microns in thickness) of Si was studied by Rutherford backscattering spectrometry (He+ ions). The measured Er profile in vacuum-annealed Si was used to determine the vaporization rate and diffusion coefficient of Er in Si in vacuum.
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Shengurov, V.G., Svetlov, S.P., Chalkov, V.Y. et al. Erbium Vaporization from Silicon in Vacuum. Inorganic Materials 39, 93–95 (2003). https://doi.org/10.1023/A:1022174008271
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DOI: https://doi.org/10.1023/A:1022174008271