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Preparation and Properties of Metal/CuInSe2 Diode Structures

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Abstract

The current–voltage characteristics of M/CuInSe2 (M = In, Sn, Cd, Ag, Au) structures were measured. The structures were found to have rectification ratios in the range k= 1.6–33 and to contain an interfacial oxide layer (M/n-In2O3/p-CuInSe2). The spectral response of the structures was studied at 300 K and photon energies from 0.8 to 1.3 eV. The photovoltaic effect was shown to be due not to electron photoemission from the metal to the semiconductor but to photocarrier separation at the interfacial barrier between n-In2O3 and p-CuInSe2.

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Authors and Affiliations

  1. Dagestan Scientific Center, Russian Academy of Sciences, Amirkhanov Institute of Physics, ul. 26 Bakinskikh komissarov 94, Makhachkala, 367003, Dagestan, Russia

    M. A. Abdullaev, I. K. Kamilov, D. Kh. Magomedova & P. P. Khokhlachev

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  1. M. A. Abdullaev
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  2. I. K. Kamilov
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  3. D. Kh. Magomedova
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  4. P. P. Khokhlachev
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Abdullaev, M.A., Kamilov, I.K., Magomedova, D.K. et al. Preparation and Properties of Metal/CuInSe2 Diode Structures. Inorganic Materials 39, 103–107 (2003). https://doi.org/10.1023/A:1022130226018

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