Abstract
We have fabricated vacuum-evaporated CdSe films with thickness, of the order of micrometers. The films show hexagonal structure with c-axes perpendicular to the glass substrates. At higher temperatures, the sample exhibits grain-boundary scattering and Se the vacancy acts as a donor impurity; while at lower temperatures, shallow donor levels overlap into the conduction band and thus metallic impurity conduction occurs.
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Kurokawa, A., Muto, J. Properties of μm-thick CdSe prepared by vacuum deposition. Journal of Materials Science: Materials in Electronics 14, 33–35 (2003). https://doi.org/10.1023/A:1021575531591
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DOI: https://doi.org/10.1023/A:1021575531591