Abstract
In-rich quantum-dot-like structures in In0.19Ga0.81N multiquantum well (MQWs) were investigated by means of high-resolution transmission electron microscopy (HRTEM) and energy-filtered (EF) TEM. It was found that thermal annealing at 900 °C led to a quasi-regular quantum-dot-like structure. However, such a structure was destroyed when the annealing temperature was raised to 950 °C. Temperature-dependent photoluminescence (PL) measurements showed quite consistent results. A blue shift of the PL peak position and narrowing of the PL spectral width after thermal annealing were observed.
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Lin, YS., Ma, KJ., Yang, CC. et al. Effects of thermal annealing on quantum-dot-like structure of medium indium-content InGaN/GaN multiquantum wells. Journal of Materials Science: Materials in Electronics 14, 49–53 (2003). https://doi.org/10.1023/A:1021531716570
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DOI: https://doi.org/10.1023/A:1021531716570