Abstract
GaSb single crystals were grown by the Czochralski method without encapsulant in an atmosphere of ionized hydrogen. It has been found that the resistivity increased by more than one order of magnitude (0.8–1.0Ω cm) and free carrier concentration decreased to the value of (1–2) × 1016 cm−3 in comparison with the crystals grown under molecular hydrogen atmosphere. A certain asymmetry in acceptor and donor passivation is assumed because the Hall concentration does not vary along the direction of crystal growth. Donors are passivated more than acceptors, which should be confirmed by increasing resistivity and decreasing mobility.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Astles M., Hill A., Williams A.J., Wright P.J., and Young M.J.: J. Electron. Mater.15 (1986) 41.
Štěpánek B. and Šestáková V.: Thermochim. Acta209 (1992) 285.
Van der Meulen Y.J.: J. Phys. Chem. Solids28 (1967) 25.
Polyakov A.Y., Pearton S.J., Wilson R.G., Rai-Choudhury R., Hilard R.J., Bao X.J., Stam M., Milnes A.G., Schlesinger T.E., and Lopata L.: Appl. Phys. Lett.60 (1992) 1318.
Šestáková V., Štěpánek B., Mareš J.J., and Šesták J: J. Cryst. Growth140 (1994) 341.
Moravec F., Šestáková V., Štěpánek B., and Charvát V.: Cryst. Res. Technol.24 (1989) 275.
Sunder W.A., Barns R.L., Kometani T.Y., Parsey J.M., Jr., and Laudise R.A.: J. Cryst. Growth78 (1986) 9.
Šestáková V. and Štěpánek B.: Thermochim. Acta209 (1992) 277.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Štěpánek, B., Šestáková, V. & Šesták, J. More progressive technology of GaSb single crystal growth. Czech J Phys 47, 693–697 (1997). https://doi.org/10.1023/A:1021278500190
Received:
Issue Date:
DOI: https://doi.org/10.1023/A:1021278500190